hl6340mg/41mg circular beam low operating current ade-208-1437b (z) rev.2 mar. 2002 description the hl6340mg/41mg are 0.63 m band algainp laser diodes can be operated with low operating current. these products were designed by self aligned refractive index (sri) active layer structure. these are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. application ? laser leveler ? laser scanner ? measurement features ? optical output power : 5 mw cw ? visible light power : 635 nm typ ? low operating current : 25 ma typ ? low aspect ratio : 1.2 typ ? operating temperature : +50c ? tm mode oscillation ld pd 1 3 internal circuit ? hl6340mg package type ? hl6340mg/41mg: mg 2 ld pd 1 3 internal circuit ? hl6341mg 2
hl6340mg/41mg rev.2, mar. 2002, page 2 of 10 absolute maximum ratings (t c = 25c) item symbol value unit optical output power p o 5mw pulse optical output power p o(pulse) 6 * mw ld reverse voltage v r(ld) 2v pd reverse voltage v r(pd) 30 v operating temperature topr ?10 to +50 c storage temperature tstg ?40 to +85 c note: pulse condition : pulse width 1 s, duty = 50 % optical and electrical characteristics (t c = 25c) item symbol min typ max unit test condition optical output power p o 5 ??mwkink free threshold current ith ? 20 30 ma slope efficiency s 0.5 0.8 1.1 mw/ma 3 (mw) / (i (4mw) ? i (1mw) ) operating current i op ? 2540ma p o = 5 mw operating voltage v op ?2.42.7v p o = 5 mw lasing wavelength p 630 635 640 nm p o = 5 mw beam divergence parallel to the junction // 13 17 25 deg. p o = 5 mw beam divergence parpendicular to the junction ? 16 20 25 deg. p o = 5 mw aspect ratio ? / // ? 1.2 1.5 ? p o = 5 mw monitor current i s 0.01 0.03 0.06 ma p o = 5 mw, v r(pd) = 5 v notes: 1. care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by esd. 2. the wavefront performance is not guaranteed. 3. the beam has 12 deg offset against the package reference plane. please take account it mounted on a board.
hl6340mg/41mg rev.2, mar. 2002, page 3 of 10 typical characteristic curves slope efficiency vs. the case temperature case temperature, t c (?c) ?0 0 50 40 30 20 10 ?0 0 50 40 30 20 10 slope efficiency, s (mw/ma) 0 0.2 0.4 0.6 1.0 1.4 optical output power, p o (mw) monitor current, i s (ma) 0.10 0.08 0.06 0.04 0.02 04 2 135 0 monitor current vs. optical output power 100 50 threshold current, ith (ma) threshold current vs. the case temperature 20 case temperature, t c (?c) v r(pd) = 5v t c = 25?c optical output power, p o (mw) 5 4 3 2 1 0 0 forward current, i f (ma) optical output power vs. forward current 60 30 10 20 40 50 50?c 1.2 0.8 10 25?c 40?c t c = 10?c
hl6340mg/41mg rev.2, mar. 2002, page 4 of 10 lasing spectrum wavelength, p (nm) 625 630 635 640 645 relative intensity polarizarion ratio vs. optical output power optical output power, p o (mw) 03 2 145 polarization ratio 0 50 100 150 200 monitor corrent vs. the case temperature 100 10203040 monitor current, i s (ma) 0 0.02 0.03 0.04 0.05 50 250 case temperature, t c ( ? c) lasing wavelength vs. the case temperature lasing wavelength, p (nm) 625 630 640 645 635 100 1020304050 case temperature, t c ( ? c) p o = 5mw p o = 3mw p o = 1mw t c = 25 ? c p o = 5mw v r = 5v p o = 5mw t c = 25 ? c na = 0.55 0.01
hl6340mg/41mg rev.2, mar. 2002, page 5 of 10 4 3 2 1 0 01 3 245 astigmatism vs. optical output power 5 0.2 0.4 0.6 0.8 1.0 40 30 20 10 0 40 30 20 10 angle, (deg.) relative intensity 0 far field pattern optical output power, p o (mw) p o = 5mw t c = 25 ? c t c = 25 ? c na = 0.55 100 80 60 40 20 0 survival rate (%) applied voltage (kv) 0 0.5 1.0 1.5 0 200 100 300 100 80 60 survival rate (%) 40 20 0 applied voltage (v) electrostatic destruction forward (c : 100pf, r : 1.5k ? ) n=10pcs ? i o 10% judgment astigmatism, a s ( m) parallel revarse (c : 100pf, r : 1.5k ? ) n=10pcs ? i o 10% judgment perpendicular electrostatic destruction
hl6340mg/41mg rev.2, mar. 2002, page 6 of 10 package dimensions hitachi code jedec jeita mass (reference value) ld/mg 0.3 g unit: mm 1 2 3 5.6 +0 0.025 1.0 0.1 (0.4) (90 ) 1.6 0.2 0.4 +0.1 0 4.1 0.3 3.55 0.1 0.25 glass 1.27 3 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 1 2 3 2.0 0.2 emitting point 12 * 1 12 * 1 the beam has 12 deg offset against the package reference plane. please take account it mounted on a board. note: 1.
hl6340mg/41mg rev.2, mar. 2002, page 7 of 10 the cautions on the handing of hl6340mg/41mg as laser diode differ from silicon devices, the area of safe operation (aso) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. these products are more sensitive to static electricity or an surge current than the conventional product. the following is test data of esd (electric static damage). the operating condition should be within 5 mw and the working please should be keep small static electricity level such as 20 v less and small surge current such as 40 ma less from out. n = 5 r = 0 c = 200pf forward : hl6340mg : hl6312g 100 0 20 40 60 80 0 200 400 applied voltage v cc (v) 1. electrostatic destructive examination data survival rate (%) 100 0 20 40 60 80 survival rate (%) 100 0 20 40 60 80 survival rate (%) 100 0 20 40 60 80 survival rate (%) 600 800 0 0.5 1.0 1.5 applied voltage v cc (kv) 2.5 2.0 3.0 0 0.5 1.0 1.5 applied voltage v cc (kv) 2.5 2.0 3.0 0204060 applied voltage v cc (v) 100 80 120 n = 5 r = 1.5k ? c = 100pf forward n = 5 r = 1.5k ? c = 100pf reverse step stress test (5 times/voltage) failure criteria ? i op 10% v cc c dut r n = 5 r = 0 c = 200pf reverse
hl6340mg/41mg rev.2, mar. 2002, page 8 of 10 600 10 100 200 300 400 500 applied voltage, v cc (v) 0 0.002 0.004 capacitance, c o ( f) 0.008 0.006 0.010 r = 1.5k ? , c = 100pf r = 0, c = 200pf step stress tast (5 times/voltage) failure criteria ? i op 10% v cc cc o dut r r o = 2.2k ? 2. clamp capacitance vs. esd of hl6340mg/41mg 120 100 0 20 40 60 80 distribution of i op (ma) applied current, i f (ma) 10 100 1m 100m 10m 1 applied puls width, p w (s) t c = 25 c 1 shot n = 10pcs 3. applied puls width vs. applied current i f p w 6 7 5 0 1 2 3 4 n (pcs) 01020 4050 30 60 destructive optical output power, p cod (mw) 4. catastrophic optical damage of hl6340mg/41mg
hl6340mg/41mg rev.2, mar. 2002, page 9 of 10 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent.
hl6340mg/41mg rev.2, mar. 2002, page 10 of 10 sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0
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